You are in the College of Science and Liberal ArtsCollege of Science and Liberal Arts

Department of Physics

Georgiou, George E.

Contact Info
Phone: 973-596-5690
Dept: Physics



  • ·         Ph.D., Plasma Physics, Columbia University, 1980.
  • ·         M.S., Applied Physics, Columbia University, 1975.
  • ·         B.S., Mechanical Engineering, Columbia University. 1974 


  • ·         Additional Education: 
  • Electrical Engineering – 1996-1997
  • Columbia University, New York, NY 10027
  • Additional Courses and Projects in Analog and RF Circuit Design and Cmmunications Networks.


Courses I Teach

Not teaching any courses this semester

Teaching at NJIT

ECE 618                                         Renewable Energy II

MtSE 681                                       Composite Materials

OPSE 410                                       Biomedical Optics

Physics 111 and 102                     Classical Mechanics Introductory Course

Physics 121                                    Electromagnetics  Introductory Course

Physics 203                                    Earth in Space                                   

Physics 611                                    Advanced Classical Mechanics

Physics 721                                    Classical Electrodynamics II

Physics 731                                    Quantum Mechanics II




P.R. Kharangargh,  D.Misra, G.E.Georgiou and K.K.Chin, “Characterization of Space Charge Layer Deep Defects of n+-CdS/p-CdTe  solar cells by temperature dependent capacitance spectroscopy.”,J.Appl.Phys. 113,144504 (2013).


P.R. Kharangargh,  D.Misra, G.E.Georgiou and K.K.Chin, “Evaluation of Cu Back Contact Related Deep Defect in CdTe Solar Cells.” ECS J. Solid State Sci.Technol. 1(5), Q110, Sept. 2012.


P.R. Kharangargh,  D.Misra, G.E.Georgiou, A. Delahoy, Z. Cheng, G.liu, H.Opyrchal and K.K.Chin, “Investigation of Defects in n+-CdS/p-CdTe  Solar Cells.”  Proc. 38th IEE PVSC (Photovoltaic Specialists Conference), p. 1286 (2012).


G. Liu, Z.Cheng, R.B.Barat, J.Pan, G.E.Georgiou and K.K.Chin, “Large Area CdS Thin Film Grown by Chemical Bath Deposition.” Proc. 37th IEEE PVSC p.3750 (2011).


Z. Cheng, K.Lo, D.Chen, J.Pan, T.Zhou, Q.Wang, G.E. Georgiou and K.K.Chin, “Working Quantum Efficiency of CdTe Solar Cell.”  Proc. 35th IEEE PVSC p.1912 (2010).


Z.Cheng, Z.Wang, P.Kharangarh, D.Chen, G.Wang, Z.Zheng, J.Liu, G.E.Georgiou and K.K.Chin, “Simulation of Dopants of p-CdTe Thin Film in n-CdS/p-CdTe  Solar Cell.” Proc. 25th EU PV SEC (PhotoVoltaic Solar Energy Conference) (2010)


G.Wang, J.Liu, Z.Zheng, J.Pan, G.Georgiou and K.K.Chin, “Numerical and Graphical Method for Calculation of Majority Carrier Compensation of Multiply Doped Semiconductors”, Proc. 25th EU PV SEC, p. 339 (2010).


R.Zhang, J.Liu, Z.Zheng, G.Wang, G.Georgiou and K.K.Chin,  “Thermionic Emission and Diffusion Theory of Type II p-n Heterojunctions Used in CdTe PV Devices” Proc. 25th EU PV SEC, p. 3486 (2010).

Jiansheng Liu, Jingong Pan, George E. Georgiou, Ken K. Chin, Zheng Zheng, Junge Tan, “A Novel Concentrator Design with PV Junctions on the Sides of a Flat Panel”, IEEE PVSC34, Philadelphia, USA, June 8-12, 2009.

Guowei Wang, Z. Zheng, J. Liu, J. Zhu, Qi Wang, E. Niver, M. Sosnowski, H. Ou, Z. Cheng, G. Georgiou, K. Chin, “Limit of Efficiency of Dual Junction Si Solar Cell with Upconversion Layer”, IEEE PVSC34, Philadelphia, USA, June 8-12, 2009.

Yan Sun, Ganhua Feng, George Georgiou, Edip Niver, Karen Noe, and Ken K. Chin, “Center embossed diaphragm design guidelines and Fabry–Perot diaphragm fiber optic sensor”, Microelectronics Journal, Volume 39 , Issue 5 (May 2008), Pages 711-716; ISSN:0026-2692

Y. Sun, G. Feng, G. Georgiou, N. Edip, K. Noe, and K. Chin, “Fabry-Perot Diaphragm Fiber Optic Sensor (DFOS) for Acoustic Detection”, NSTI Conference, San Francisco (2007). Ken K. Chin, Yan Sun, G. Feng, George E. Georgiou, Kangzhu Guo, Edip Niver, and Harry Roman, and Karen Noe, “Fabry-Perot Diaphragm Fiber Optic Sensor”, Applied Optics, Vol. 46, No. 31, 7614-7619, Nov. 1, 2007.

G. Georgiou. K.K.Chin, G.Feng, R.Ferraro and K.Noe, “Data Network for Transmission Line Monitoring” Proc.  18th IEEE PIMRC (International Symposium on Personal, Indoor and Mobile Radio Communications), September, 3-6, 2007, Athens, Greece

Yan Sun, Guanhua Feng, George Georgiou, Edip Niver, Karen Noe, and Ken K. Chin, “Fabry-Perot Diaphragm Fiber Optic Sensor (DFOS) for Acoustic Detection”, Sensors & Transducers Special Issue, p. 76-83, October 2007.

Ken K. Chin, G. Feng, and George E. Georgiou, Kanzhu Guo, Yan Sun, Edip Niver, and Harry Roman, “World’s First Pure Fabry-Perot Diaphragm Fiber Optic Sensor (DFOS),”  Proc. OFS18 (18th International Conference of Optical Fiber Sensors) (2006).

L. G. Frechette, C .W. Wong, K. Chin, G. Georgiou. K. F. Farmer, F. Miller and V. Modi, “Hands-on-MEMS: Building Competence through Practical Learning Experiences”, Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head, SC, June 4-8 2006.

G. Georgiou, Y. Baeyens, K. Chen, A. H. Gnauck, C. Groepper, P. Paschke, R. Pullela, M. Reinhold, C. Dorshky, J. P. Mattia, T. W. vonMohrenfels and C. Schullien, “Clock and Data Recovery IC for 40Gb/s Fiber-Optic Receiver”,IEEE J.Solid State Circuits, 37, 1120 (2002).

Y. Baeyens,G. Georgiou,J. Weiner,V. Houtsma, P. Paschke, Q. Lee, A. Leven, R. Kopf, J. Frackoviak, C. Chen, C. T. Liu and K. Chen, InP D-HBT IC´s for 40 Gb/s and Higher Bitrate Lightwave Transceivers”, IEEE J. Solid State Circuits,37, 1152 (2002).

K. Chen, Y. Baeyens, C. T. Liu, R. Kopf, R. Hamm, C. Chen, Y. Yang, J. Frackoviak, A. Tate, P. Paschke, J. Weiner, G. Georgiou, P. Roux and V. Houstma, “Semiconductor technologies for high speed optical networking”, IEDM Technical Digest, p.15.1.1(2001).

R. F. Kopf, R. A. Hamm, R. W. Ryan, A. Tate, R. Pullela, G. Georgiou, J. P. Mattia, and Y. K. Chen, "Dry-Etch Fabrication of Reduced Area InGaAs/InP HBTs", J. Electron. Mat. 29, 222 (2000).

R. F. Kopf, Y. Wang, R. A. Hamm, R. W. Ryan, A. Tate, M. Melendes, R. Pullela, G. E. Georgiou, J. P. Mattia, Y. Baeyens, H. Tsai, N. G. Weimann, Q. Lee,and Y. Chen,“Fabrication of Reduced Area InGaAs/InP and DHBT Devices",Proc.197th ECS Meeting,(Spring 2000).

J. P. Mattia, R. Pullela, G. E. Georgiou, Y. Baeyens, H. Tsai, Y. Chen, C. Dorschky, T. Winklervonmohrenfels, M. Reinhold, C. Groepper, M. Sokolich, L. Nguyen, and W. Stanchina,“High-Speed Multiplexers: A 50 GB/s 4:1 MUX in InP HBT Technology”,GaAsIC Symposium Technical Digest, October 1999, p.189.

G. E. Georgiou, P. Paschke, R. Kopf, R. Hamm, R. Ryan, A. Tate, J. Burm, C. Schulien and Y. K. Chen, “High Gain Limiting Amplifier for 10Ghps Lightwave Receivers” , Proc. 11th Int’l Conference on Indium Phosphide and Related Materials, p.71 (1999).

R. F. Kopf, R. A. Hamm, Y. Wang, R. W. Ryan, A. Tate, M. Melendes, R. Pullela, G. E. Georgiou, J. P. Mattia, Y. Baeyens, H. Tsai, and Y. K. Chen,“Optimization of InGaAs/InP DHBT Devices for Use in High Speed Circuits”, Proc. 196th Electrochemical Society Meeting( Fall 1999).

R. Pullela, J. P. Mattia, G. E. Georgiou, R. F. Kopf, R. A. Hamm, Y. Baeyens, H. Tsai, and Y. K.Chen, “Indium Phosphide Heterojunction Bipolar Transistor Technology for Fiber-Optic Communication Circuits”, Proc. 195th Electrochemical Society Conference( Spring 1999).

R. F. Kopf, R. A. Hamm, R. J. Malik, R. W. Ryan, J. Burm, A. Tate, Y. K. Chen, G. Georgiou, D. V. Lang, M. Geva and F. Ren, “Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures for High Speed Circuit Application” Mat.Res.Soc.Symp.Proc. Vol. 483 (1998) p.413.

Y. Kim, J. Bevk, M. Furtsch, G. E. Georgiou, W. M. Mansfield, R. L. Masaitis, R. L. Opila, and P. J. Silverman, “Microstructural Changes in W-Polycide Gates capped with a Thin Poly-Silicon Layer”, Proc. Materials Research Society Symposium ( Fall 1998).R. F. Kopf, R. A. Hamm, R. W. Ryan, J. Burm, A. Tate, Y. K. Chen, G. Georgiou, F. Ren, and D. V. Lang, “Fabrication of Reliable InGaAs/InP DHBT Structures for High Speed Circuit Applications,” Proc. ECS Symposium(Spring 1998).

J. Lin, J. S. Weiner, H. Tsai, G. E. Georgiou, Y. Chen, K. L. Tai, M. Y. Lau, and D. P. Kossives, “Silicon Low Noise Amplifier Chips for Multi-Chip Module Integration on A Silicon-Based Substrate”, Proc. IEEE RFIC Symposium (1997).

T. G. Schiml, J. Bevk, G. E. Georgiou, R. A. Cirelli, W. M. Mansfield, P. J. Silverman, H. S. Luftman and M. Furtsch,“Measurement of Lateral Dopant Diffusion in Rapid Thermal Annealed W-Polycide Gate Structures” Proc. of Materials Research Society Symposium (Spring 1996).

J. Bevk, M. Furtsch, G. E. Georgiou, S. J. Hillenius, D. Schielein, T. Schiml, P. J. Silverman and H, S. Luftman, “RTA Processing of W-Polycide Dual-Gate Sub-Micron Structures For Low-Voltage CMOS Technology”. IEDM Technical Digest (1995).

G. E. Georgiou, H. Abiko, F. A. Baiocchi, N. T. Ha and S. Nakahara, "Thermal Stability Limits of Thin TiSi2 - Effect on Sub-Micron Line Resistance and Shallow Junction Leakage." J. Electrochem.Soc. 141,1351 (1994).

S. A. Esahraghi, G. E. Georgiou, N. T. Ha and R. Liu, "Characterization of Double Diffused Arsenic/Phosphorus Shallow n+/p Junctions.", J. Electrochem. Soc. 139, 3648 (1992).

G. E. Georgiou, S. A. Eshraghi, N. T. Ha and R. Liu, "Characterization of Shallow p+(BF2)/n Junctions with TiSi2.",J. Electrochem. Soc. 139, 3644 (1992).

S. A. Eshraghi, G. E. Georgiou and R. Liu, "The Effect of the Chemical Vapor Deposition of Tungsten on Shallow n+/p and p+/n Junctions Using Titanium-Tungsten as a Barrier.", J. Appl. Phys. 68, 2839 (1990).

G. E. Georgiou, T. T. Sheng, F. A. Baiocchi, J. Kovalchick, W. T. Lynch and D. Malm, "Shallow Junctions by Out-Diffusion from Arsenic Implanted Polycrystalline Silicon.", J.Appl.Phys. 68, 3714 (1990).

G. E. Georgiou, T. T. Sheng, J. Kovalchick, W. T. Lynch and D. Malm, "Shallow Junctions by Out-Diffusion from BF2 Implanted Polycrystalline Silicon.", J. Appl. Phys. 68, 3707 (1990).

G.E.Georgiou, K.P.Cheung and R.Liu, "Planarized Aluminum Deposition on TiW and TiN Layers by High Temperature Evaporation.", Proc. VLSI Multilevel  Interconnect Conf. (1989) p. 315.  


G.E.Georgiou, H.S.Luftman, F.A.Baiocchi, T.T.Sheng and M.J.Vasile,  "Thick Selective Electroless Plated Cobalt Alloy Contacts to Shallow Junctions below CoSi2." in Tungsten and Other Refractory Metals III, V.A.Wells,ed.,(Materials Res. Soc., Pittsburgh, Pa.,1988) p. 249.


G.E.Georgiou, J.M.Brown, M.L.Green, R.Liu, D.S.Williams and R.S.Blewer, "The Influence of Selective Tungsten Deposition on Shallow Junction Leakage." in Tungsten and Other Refractory Metals II, E.K.Broadbent,ed.,(Materials Res. Soc., Pittsburgh, Pa.,1987) p. 227.


S.J.Hillenius, R.Liu, G.E.Georgiou, R.L.Field, D.S.Williams, A.Kornblit, D.M.Boulin, R.L.Johnston and W.T.Lynch, "A Symmetric Submicron CMOS Technology." IEDM Tech. Digest (1986) p. 252.


G.E.Georgiou, C.A.Jankowski and T.A.Palumbo, "DC Electroplating of Sub-micron Gold Patterns on X-ray Masks." Proc. SPIE , 471, 96 (1984).


G.E.Georgiou, T.C.Marshall and P.G.Weber,  "Study of Turbulent Heating Effects in the High Beta Tokamak Torus II.",  Phys. Fluids 10, 2085 (1980).


Book Chapter:

G.E.Georgiou, "Silicides and Contacts for ULSI", in "Multilevel Metallization of Integrated Circuits", S.R.Wilson, C.J.Tracy  and J.L.Freeman,eds., (Noyce Publications, Park Ridge, N.J., 1993).